Number of the records: 1
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
- 1.
SYSNO ASEP 0502838 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface Author(s) Hubáček, Tomáš (FZU-D) ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Hájek, František (FZU-D) ORCID
Dominec, Filip (FZU-D) RID, ORCID
Florini, N. (GR)
Komninou, Ph. (GR)
Ledoux, G. (FR)
Dujardin, C. (FR)Number of authors 12 Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 507, Feb (2019), s. 310-315Number of pages 6 s. Publication form Print - P Language eng - English Country NL - Netherlands Keywords interfaces ; MOVPE ; quantum wells ; nitrides ; scintillators Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-11769S GA ČR - Czech Science Foundation (CSF) LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access with time embargo (01.02.2021) Institutional support FZU-D - RVO:68378271 UT WOS 000455667500051 EID SCOPUS 85057811376 DOI 10.1016/j.jcrysgro.2018.11.038 Annotation This work concentrates on the technology procedure for growth of upper QW interfaces in InGaN/GaN QW structure when different temperature for QW and barrier epitaxy is used. We have found that optimal PL results were achieved, when the growth after QW formation was not interrupted, but immediately continued during the temperature ramp by the growth of (In)GaN capping layer with small introduction of In precursor into the reactor. Optimal barrier between QW with respect to PL results was found to be pure GaN. We have shown according to SIMS and HRTEM results that by this technological procedure the InGaN desorption was considerably suppressed and three times higher In concentration and two times thicker QWs were achieved for the same QW growth parameters without eterioration of PL intensity in comparison to sample with usually used thin GaN low temperature capping protection.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019
Number of the records: 1