Number of the records: 1  

Improved contactless method of IR reflectance under grazing incidence for measurement of doping profiles

  1. 1.
    SYSNO ASEP0501967
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleImproved contactless method of IR reflectance under grazing incidence for measurement of doping profiles
    Author(s) Holovský, Jakub (FZU-D) RID, ORCID
    Remeš, Zdeněk (FZU-D) RID, ORCID
    Franta, D. (CZ)
    Conrad, B. (CZ)
    Abelová, Lucie (FZU-D)
    Bušek, D. (CZ)
    Poruba, Aleš (FZU-D) RID
    Number of authors7
    Source TitleProceedings of 35th European Photovoltaic Solar Energy Conference and Exhibition. - Brusel : WIP, 2018 - ISBN 3-936338-50-7
    Pagess. 278-280
    Number of pages3 s.
    Publication formOnline - E
    ActionEuropean Photovoltaic Solar Energy Conference and Exhibition /35./
    Event date24.09.2018 - 28.09.2018
    VEvent locationBrusel
    CountryBE - Belgium
    Event typeWRD
    Languageeng - English
    CountryBE - Belgium
    Keywordsdiffusion ; characterisation ; free-carrier absorption ; in-Line ; IR spectroscopy
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGA18-24268S GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    DOI10.4229/35thEUPVSEC20182018-2AO.5.3
    AnnotationWe have elaborated contactless method of measurement and evaluation of doping profiles in silicon polished wafers based on infrared reflectance under high angle of incidence. We have found higher angle of incidence increases sensitivity, however approaching Brewster angle increases also experimental error, therefore 65 angle has been chosen. Moreover, to increase reproducibility we divide the measured spectra by reference spectra taken on an undoped sample, and further we rescale the spectra to fixed value in the region of 4000 cm-1–7000 cm-1. To reduce number of evaluated parameter, the carrier profile in boron-doped samples was parametrized by 3 parameters and that in phosphorous-doped samples was parametrized by 4 parameters, using additional empirically determined assumption that the first part of the profile is a constant plateau and that the following two exponential tails are joined at a value of 3x10^19 cm-3.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2019
Number of the records: 1  

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