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Co‐implantation of Er and Yb ions into single‐crystalline and nano‐crystalline diamond
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SYSNO ASEP 0500971 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Co‐implantation of Er and Yb ions into single‐crystalline and nano‐crystalline diamond Author(s) Cajzl, Jakub (URE-Y)
Akhetova, B. (CZ)
Nekvindová, P. (CZ)
Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Remeš, Zdeněk (FZU-D) RID, ORCID
Varga, Marián (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAINumber of authors 9 Source Title Surface and Interface Analysis. - : Wiley - ISSN 0142-2421
Roč. 50, č. 11 (2018), s. 1218-1223Number of pages 6 s. Publication form Print - P Action 17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017) Event date 24.09.2017 - 29.09.2017 VEvent location Monpellier Country FR - France Event type EUR Language eng - English Country GB - United Kingdom Keywords nano-crystalline diamond ; diamond ; erbium ; ytterbium Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Condensed matter physics (including formerly solid state physics, supercond.) Subject RIV - cooperation Nuclear Physics Institute - Nuclear, Atomic and Molecular Physics, Colliders
Institute of Physics - Solid Matter Physics ; MagnetismR&D Projects LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA15-01602S GA ČR - Czech Science Foundation (CSF) LTC17029 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support URE-Y - RVO:67985882 ; UJF-V - RVO:61389005 ; FZU-D - RVO:68378271 UT WOS 000448889600044 EID SCOPUS 85042789506 DOI 10.1002/sia.6407 Annotation The paper reports on the results of Er-Yb and Er-Al co-implantation into commercial single-crystalline diamonds as well as into nano-crystalline diamond (NCD) thin films and their photoluminescence properties. The NCD thin films were deposited on fused silica glass by linear-antenna microwave plasma-enhanced chemical vapour deposition (PE MWCVD). Er implantation was performed at an energy of 190 keV and fluences of 1 x 10(15) and 5 x 10(15) ions. cm(-2) followed by Yb co-implantation under the same conditions or Al co-implantation at an energy of 40 keV and the same fluences. The concentration depth profiles of the elements and the degree of their crystal damage (structural ordering) were measured using Rutherford backscattering spectroscopy and Rutherford backscattering spectroscopy/channelling, respectively. Structural changes were studied by Raman spectroscopy. All Er-Yb doped samples revealed measurable photoluminescence at approximately 1.5 mu m. A comparison with Er-implanted samples showed that the Er-Yb co-implantation was beneficial for the photoluminescence at 1.5 mu m in both substrates. Er-doped NCD films revealed higher intensity of luminescence than Er-doped single-crystal diamond. This observation is attributed to the specific incorporation of Er into the diamond and at the grain boundaries Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2019
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