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Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions

SYSNO ASEP	0497102
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions
Author(s)	Macková, Anna (UJF-V)_{RID, ORCID, SAI} Malinský, Petr (UJF-V)_{RID, ORCID, SAI} Jagerová, Adéla (UJF-V)_{ORCID, SAI} Sofer, Z. (CZ) Klímová, K. (CZ) Sedmidubský, D. (CZ) Mikulics, M. (DE) Bottger, R. (DE) Akhmadaliev, S. (DE)
Number of authors	9
Source Title	Surface and Coatings Technology. - : Elsevier - ISSN 0257-8972 Roč. 355, SI (2018), s. 22-28
Number of pages	7 s.
Publication form	Print - P
Action	International Conference on Surface Modification of Materials by Ion Beams (SMMIB)
Event date	09.07.2017 - 14.07.2017
VEvent location	Lisbon
Country	PT - Portugal
Event type	WRD
Language	eng - English
Country	CH - Switzerland
Keywords	GaN damage accumulation ; structure modification in c-plane and a-plane ; GaN ; RBS channeling studies of implanted GaN
Subject RIV	BG - Nuclear, Atomic and Molecular Physics, Colliders
OECD category	Nuclear physics
R&D Projects	EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA15-01602S GA ČR - Czech Science Foundation (CSF)
Institutional support	UJF-V - RVO:61389005
UT WOS	000449896800006
EID SCOPUS	85042634118
DOI	10.1016/j.surfcoat.2018.02.097
Annotation	GaN is the most actively studied wide-bandgap material, applicable e.g. in short-wavelength optoelectronic devices, high-electron-mobility transistors, and semiconductor lasers. The crystallographic orientation of an implanted crystal can significantly influence the optical properties of the implanted layer, reflecting the rearrangement of the crystal matrix after annealing. The annealing procedure, influencing dynamic recovery, point defect diffusion and large defect stabilisation, depending on the GaN crystal orientation and the used ion implantation parameters, is still an important issue to be studied. We have studied the structural and compositional changes of the GaN-epitaxial-layers of c-plane and a-plane orientations grown by MOVPE and implanted with Gd and Kr ions using the ion energy of 400 keV and ion fluences of 5 x 10(14) cm(-2), 1 x 10(15) cm(-2) and 5 x 10(15) cm(-2) with subsequent annealing at 800 degrees C in ammonia. Dopant depth profiling was accomplished by Rutherford backscattering spectrometry (RBS). Induced structure disorder and its recovery during subsequent annealing were characterised by RBS channelling and Raman spectroscopy. Ion-implanted c-plane and a-plane GaN exhibit significant differences in damage accumulation simultaneously with post-implantation annealing, inducing a different structural reorganization of the GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the ion-implantation fluence and ion mass.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2019

Number of the records: 1