Number of the records: 1  

Enhanced diamond nucleation via photoresist polymers combined with nanodiamond seeding layers

  1. 1.
    SYSNO ASEP0496872
    Document TypeA - Abstract
    R&D Document TypeThe record was not marked in the RIV
    R&D Document TypeNení vybrán druh dokumentu
    TitleEnhanced diamond nucleation via photoresist polymers combined with nanodiamond seeding layers
    Author(s) Szabó, Ondrej (FZU-D) ORCID, RID
    Ižák, Tibor (FZU-D) RID
    Potocký, Štěpán (FZU-D) RID, ORCID
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Number of authors4
    Source TitleNANOCON 2017 - Book of Abstracts. - Ostrava : Tanger Ltd, 2017 / Shrbená J. - ISBN 978-80-87294-78-9
    S. 89-90
    Number of pages2 s.
    ActionNANOCON 2017. International Conference on Nanomaterials - Research & Application /9./
    Event date18.10.2017 - 20.10.2017
    VEvent locationBrno
    CountryCZ - Czech Republic
    Event typeWRD
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordsdiamond film ; nucleation ; polymers ; Raman ; SEM
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGA17-19968S GA ČR - Czech Science Foundation (CSF)
    7AMB17AT036 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportFZU-D - RVO:68378271
    AnnotationHere we studied the influence of two different photoresist polymers (S1802 and ma1215 spin-coated at thicknesses 100 nm and 1.5 m, respectively) and their multi-layered combinations with nanodiamond seeding layer(s) on the nucleation and growth of diamond thin films. Before the diamond CVD growth the atomically flat (100) silicon substrates were treated in different ways employing i) only nanodiamond seeding layer (NL), ii) only photoresist layer (PL), iii) nanodiamond/photoresist layer (NL/PL) and other layer combinations: iv) PL/NL, v) NL/PL/NL, vi) PL/NL/PL. All the samples were loaded to the microwave CVD system to grow the diamond thin films at low temperature (300 °C) in H2/CH4/CO2 gas mixture for 3 and 9 hours. The film morphology and its quality were evaluated by scanning electron microscopy and Raman measurements.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2019
Number of the records: 1  

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