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Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions
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SYSNO ASEP 0496731 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions Author(s) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Sofer, Z. (CZ)
Sedmidubský, D. (CZ)
Klímová, K. (CZ)
Bottger, R. (DE)
Akhmadaliev, S. (DE)Number of authors 8 Source Title Surface and Interface Analysis. - : Wiley - ISSN 0142-2421
Roč. 50, č. 11 (2018), s. 1099-1105Number of pages 7 s. Publication form Print - P Action 17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017) Event date 24.09.2017 - 29.09.2017 VEvent location Monpellier Country FR - France Event type EUR Language eng - English Country US - United States Keywords damage accumulation in GaN ; RBS channeling in ion-modified GaN ; structure modification in c-plane and a-plane GaN Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Nuclear physics R&D Projects EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA15-01602S GA ČR - Czech Science Foundation (CSF) Institutional support UJF-V - RVO:61389005 UT WOS 000448889600022 EID SCOPUS 85042605382 DOI https://doi.org/10.1002/sia.6403 Annotation c-plane (0001) and a-plane (11-20) gallium nitride (GaN) epitaxial layers were grown by Metal organic Vapour Phase epitaxy (MOVPE) on sapphire and subsequently implanted with 400-keV and 5-MeV Au+ ions using fluences 5 x 10(14) to 5 x 10(15) cm(-2). The shallow Au depth profiling was accomplished by Rutherford backscattering spectrometry. The structural changes during implantation and subsequent annealing were characterised by Rutherford backscattering spectrometry channelling and Raman spectroscopy. The interplay between nuclear and electronic stopping, influencing defect accumulation, was monitored and discussed depending on GaN orientation. Post-implantation annealing induced a structural reorganisation of the GaN structure depending on the ion-implantation fluence, ion energy, and on the crystallographic orientation. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2019
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