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Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions

SYSNO ASEP	0496731
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions
Author(s)	Macková, Anna (UJF-V)_{RID, ORCID, SAI} Malinský, Petr (UJF-V)_{RID, ORCID, SAI} Jagerová, Adéla (UJF-V)_{ORCID, SAI} Sofer, Z. (CZ) Sedmidubský, D. (CZ) Klímová, K. (CZ) Bottger, R. (DE) Akhmadaliev, S. (DE)
Number of authors	8
Source Title	Surface and Interface Analysis. - : Wiley - ISSN 0142-2421 Roč. 50, č. 11 (2018), s. 1099-1105
Number of pages	7 s.
Publication form	Print - P
Action	17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017)
Event date	24.09.2017 - 29.09.2017
VEvent location	Monpellier
Country	FR - France
Event type	EUR
Language	eng - English
Country	US - United States
Keywords	damage accumulation in GaN ; RBS channeling in ion-modified GaN ; structure modification in c-plane and a-plane GaN
Subject RIV	BG - Nuclear, Atomic and Molecular Physics, Colliders
OECD category	Nuclear physics
R&D Projects	EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA15-01602S GA ČR - Czech Science Foundation (CSF)
Institutional support	UJF-V - RVO:61389005
UT WOS	000448889600022
EID SCOPUS	85042605382
DOI	10.1002/sia.6403
Annotation	c-plane (0001) and a-plane (11-20) gallium nitride (GaN) epitaxial layers were grown by Metal organic Vapour Phase epitaxy (MOVPE) on sapphire and subsequently implanted with 400-keV and 5-MeV Au+ ions using fluences 5 x 10(14) to 5 x 10(15) cm(-2). The shallow Au depth profiling was accomplished by Rutherford backscattering spectrometry. The structural changes during implantation and subsequent annealing were characterised by Rutherford backscattering spectrometry channelling and Raman spectroscopy. The interplay between nuclear and electronic stopping, influencing defect accumulation, was monitored and discussed depending on GaN orientation. Post-implantation annealing induced a structural reorganisation of the GaN structure depending on the ion-implantation fluence, ion energy, and on the crystallographic orientation.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2019

Number of the records: 1