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Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition

SYSNO ASEP	0487097
Document Type	A - Abstract
R&D Document Type	O - Ostatní
Title	Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition
Author(s)	Ižák, Tibor (FZU-D)_RID Jirásek, Vít (FZU-D)_RID Vanko, G. (SK) Dzuba, J. (SK) Babchenko, O. (SK) Držík, M. (SK) Kromka, Alexander (FZU-D)_{RID, ORCID, SAI}
Number of authors	7
Source Title	Book of Abstracts of International Symposium on Surface Science /8./ (ISSS-8). - Tsukuba : SSSJ, 2017
Number of pages	1 s.
Publication form	Online - E
Action	International Symposium on Surface Science /8./ (ISSS-8)
Event date	22.10.2017 - 26.10.2017
VEvent location	Tsukuba
Country	JP - Japan
Event type	WRD
Language	eng - English
Country	JP - Japan
Keywords	diamond ; GaN ; Raman spectroscopy ; stress
Subject RIV	BL - Plasma and Gas Discharge Physics
OECD category	Fluids and plasma physics (including surface physics)
R&D Projects	GBP108/12/G108 GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
Annotation	Here, we present technological issues in the deposition of diamond films as a heat spreader for GaN membranes. GaN membranes were fabricated by deep reactive ion etching of Si. Deposition of diamond on the “front” or “back-side” of GaN were performed by MWCVD. The thickness of deposited diamond films were 0.4, 3.5 and 12 um. The diamond/GaN heterostructures were studied in terms of thermally-induced stress analysis by Raman spectroscopy and FEM simulations. The stress was evaluated from the Raman shift of the diamond or GaN peak position within the temperature range from 50 to 400°C. The shift was measured at two positions: at the center and edge of the membrane. While in the case of bottom-side deposition the grown diamond layer was relatively homogeneous and covered the whole 3D hole (i.e. including its sidewalls), in the case of top-side deposition a thicker diamond layer was grown at the membrane center.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2018
Electronic address	http://www.sssj.org/isss8/timetable.html#poster-program

Number of the records: 1