Enhanced oxidation of TiO.sub.2./sub. films prepared by high power impulse magnetron sputtering running in metallic mode

Straňák, V.; Kratochvíl, J.; Olejníček, Jiří; Kšírová, Petra; Sezemsky, P.; Čada, Martin; Hubička, Zdeněk

doi:https://dx.doi.org/10.1063/1.4977825

Number of the records: 1

Enhanced oxidation of TiO.sub.2./sub. films prepared by high power impulse magnetron sputtering running in metallic mode

1.

SYSNO ASEP	0486984
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Enhanced oxidation of TiO₂ films prepared by high power impulse magnetron sputtering running in metallic mode
Author(s)	Straňák, V. (CZ) Kratochvíl, J. (CZ) Olejníček, Jiří (FZU-D)_{RID, ORCID} Kšírová, Petra (FZU-D)_{RID, ORCID} Sezemsky, P. (CZ) Čada, Martin (FZU-D)_{RID, ORCID, SAI} Hubička, Zdeněk (FZU-D)_{RID, ORCID, SAI}
Number of authors	7
Article number	171914
Source Title	Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979 Roč. 121, č. 17 (2017), s. 1-9
Number of pages	9 s.
Language	eng - English
Country	US - United States
Keywords	sputter deposition ; plasma deposition ; gas discharges ; metallic thin films ; probe plasma diagnostics
Subject RIV	BL - Plasma and Gas Discharge Physics
OECD category	Fluids and plasma physics (including surface physics)
R&D Projects	GA15-00863S GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
UT WOS	000400623700016
EID SCOPUS	85014857019
DOI	10.1063/1.4977825
Annotation	A method is introduced that allows suppressing unwanted effects of target poisoning during reactive high-power impulse magnetron sputtering (R-HiPIMS) employed for deposition of oxide films. The method, based on higher reactivity of excited/activated oxygen species, is studied and demonstrated on TiO2 films deposited in R-HiPIMS discharge running very close to the metallic mode with a high deposition rate. An external source of energetic plasma that activates oxygen gas, delivered to the vicinity of the substrate, is combined with conventional R-HiPIMS of the Ti target. The activated oxygen species enable reducing the total flow rate, which simultaneously results in suppression of the target poisoning effect. On the other hand, sufficient oxidation and growth of transparent crystalline TiO2 films were observed.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2018

Number of the records: 1