Number of the records: 1  

Changes of the absorption cross section of Si nanocrystals with temperature and distance

  1. 1.
    SYSNO ASEP0482700
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleChanges of the absorption cross section of Si nanocrystals with temperature and distance
    Author(s) Greben, M. (CZ)
    Khoroshyy, Petro (UOCHB-X) ORCID, RID
    Gutsch, S. (DE)
    Hiller, D. (DE)
    Zacharias, M. (DE)
    Valenta, J. (CZ)
    Source TitleBeilstein Journal of Nanotechnology. - : Beilstein - Institut zur Foerderung der Chemischen Wissenschaften - ISSN 2190-4286
    Roč. 8, Nov 6 (2017), s. 2315-2323
    Number of pages9 s.
    Languageeng - English
    CountryDE - Germany
    Keywordsabsorption cross section ; average lifetime ; nanocrystal distance ; photoluminescence decay ; silicon nanocrystals
    Subject RIVCF - Physical ; Theoretical Chemistry
    OECD categoryPhysical chemistry
    Institutional supportUOCHB-X - RVO:61388963
    UT WOS000415308200001
    EID SCOPUS85034224472
    DOI10.3762/bjnano.8.231
    AnnotationThe absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under modulated pumping. We clearly demonstrate that roughly doubling the barrier thickness (from ca. 1 to 2.2 nm) induces a decrease of the ACS by a factor of 1.5. An optimum separation barrier thickness of ca. 1.6 nm is calculated to maximize the PL intensity yield. This large variation of ACS values with barrier thickness is attributed to a modulation of either defect population states or of the efficiency of energy transfer between confined NC layers. An exponential decrease of the ACS with decreasing temperature down to 120 K can be explained by smaller occupation number of phonons and expansion of the band gap of Si NCs at low temperatures. This study clearly shows that the ACS of Si NCs cannot be considered as independent on experimental conditions and sample parameters.
    WorkplaceInstitute of Organic Chemistry and Biochemistry
    Contactasep@uochb.cas.cz ; Kateřina Šperková, Tel.: 232 002 584 ; Viktorie Chládková, Tel.: 232 002 434
    Year of Publishing2018
    Electronic addresshttps://www.beilstein-journals.org/bjnano/articles/8/231
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.