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Structural and optical properties of Gd implanted GaN with various crystallographic orientations

SYSNO ASEP	0479677
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Structural and optical properties of Gd implanted GaN with various crystallographic orientations
Author(s)	Macková, Anna (UJF-V)_{RID, ORCID, SAI} Malinský, Petr (UJF-V)_{RID, ORCID, SAI} Jagerová, Adéla (UJF-V)_{ORCID, SAI} Sofer, Z. (CZ) Klímová, K. (CZ) Sedmidubský, D. (CZ) Pristovsek, M. (GB) Mikulics, M. (DE) Lorinčík, Jan (URE-Y) Bottger, R. (DE) Akhmadaliev, S. (DE)
Number of authors	11
Source Title	Thin Solid Films. - : Elsevier - ISSN 0040-6090 Roč. 638, SEP (2017), s. 63-72
Number of pages	11 s.
Publication form	Print - P
Language	eng - English
Country	CH - Switzerland
Keywords	GaN implantation ; RBS channelling ; optical properties of Gd implanted GaN
Subject RIV	BG - Nuclear, Atomic and Molecular Physics, Colliders
OECD category	1.3 Physical sciences
Subject RIV - cooperation	Institute of Radio Engineering and Electronics - Optics, Masers, Lasers
R&D Projects	GA13-20507S GA ČR - Czech Science Foundation (CSF)
	GA15-01602S GA ČR - Czech Science Foundation (CSF)
	LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	URE-Y - RVO:67985882 ; UJF-V - RVO:61389005
UT WOS	000411775900009
EID SCOPUS	85025099941
DOI	10.1016/j.tsf.2017.07.036
Annotation	Structure, morphology, and optical properties of Gd implanted GaN epitaxial layers were studied for (0001), (11-20), and (11-22) orientations. The GaN layers grown by MOVPE on sapphire were subsequently implanted with 200 keV Gd+ ions using fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Dopant depth profiling was accomplished by Rutherford Back-Scattering spectrometry (RBS). Structural and optical changes during subsequent annealing were characterized by RBS, Raman spectroscopy, and photoluminescence measurements. Post-implantation annealing induced a structural reorganization of GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the implantation fluence and on crystallographic orientation. The defect density depth distribution was evaluated by RBS. The surface morphology and optical properties depend on particular crystallographic orientation.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2018

Number of the records: 1