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The deposition of germanium nanoparticles on hydrogenated amorphous silicon

SYSNO ASEP	0478395
Document Type	C - Proceedings Paper (int. conf.)
R&D Document Type	Conference Paper
Title	The deposition of germanium nanoparticles on hydrogenated amorphous silicon
Author(s)	Stuchlík, Jiří (FZU-D)_{RID, ORCID} Volodin, V.A. (RU) Shklyaev, A.A. (RU) Stuchlíková, The-Ha (FZU-D)_{RID, ORCID} Ledinský, Martin (FZU-D)_{RID, ORCID, SAI} Čermák, Jan (FZU-D)_{RID, SAI, ORCID} Kupčík, Jaroslav (UCHP-M)_{RID, ORCID, SAI} Fajgar, Radek (UCHP-M)_{RID, ORCID, SAI} Mortet, Vincent (FZU-D)_{RID, ORCID} More Chevalier, Joris (FZU-D)_ORCID Ashcheulov, Petr (FZU-D)_{ORCID, RID} Purkrt, Adam (FZU-D)_RID Remeš, Zdeněk (FZU-D)_{RID, ORCID}
Number of authors	13
Source Title	NANOCON 2016 8th International Conference on Nanomaterials - Research & Application. Conference proceedings. - Ostrava : TANGER Ltd., 2017 - ISBN 978-80-87294-71-0
Pages	s. 133-137
Number of pages	5 s.
Publication form	Print - P
Action	NANOCON 2016. International Conference on Nanomaterials - Research and Application /8./
Event date	19.10.2016 - 21.10.2016
VEvent location	Brno
Country	CZ - Czech Republic
Event type	WRD
Language	eng - English
Country	CZ - Czech Republic
Keywords	Ge nanoparticles ; a-Si:H ; PECVD ; MBE
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
Subject RIV - cooperation	Institute of Chemical Process Fundamentals Institute of Chemical Process Fundamentals - Physical ; Theoretical Chemistry
R&D Projects	GA13-12386S GA ČR - Czech Science Foundation (CSF)
	GA13-31783S GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271 ; UCHP-M - RVO:67985858
UT WOS	000410656100022
EID SCOPUS	85017253227
Annotation	We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2018

Number of the records: 1