PLD prepared bioactive BaTiO.sub.3./sub. films on TiNb implants

Jelínek, Miroslav; Vaněk, Přemysl; Tolde, Z.; Buixaderas, Elena; Kocourek, Tomáš; Studnička, Václav; Drahokoupil, Jan; Petzelt, Jan; Remsa, Jan; Tyunina, Marina

doi:https://dx.doi.org/10.1016/j.msec.2016.08.072

Number of the records: 1

PLD prepared bioactive BaTiO.sub.3./sub. films on TiNb implants

1.

SYSNO ASEP	0473792
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	PLD prepared bioactive BaTiO₃ films on TiNb implants
Author(s)	Jelínek, Miroslav (FZU-D)_{RID, ORCID} Vaněk, Přemysl (FZU-D)_{RID, ORCID} Tolde, Z. (CZ) Buixaderas, Elena (FZU-D)_{RID, ORCID} Kocourek, Tomáš (FZU-D)_{RID, ORCID, SAI} Studnička, Václav (FZU-D)_RID Drahokoupil, Jan (FZU-D)_{RID, ORCID} Petzelt, Jan (FZU-D)_{RID, ORCID, SAI} Remsa, Jan (FZU-D)_{RID, ORCID} Tyunina, Marina (FZU-D)_ORCID
Number of authors	10
Source Title	Materials Science & Engineering C-Materials for Biological Applications. - : Elsevier - ISSN 0928-4931 Roč. 70, Jan (2017), s. 334-339
Number of pages	6 s.
Language	eng - English
Country	CH - Switzerland
Keywords	BaTiO₃ ; thin films ; pld ; implants ; TiNb ; ferroelectricity
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	GA15-05864S GA ČR - Czech Science Foundation (CSF)
	GA15-01558S GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
UT WOS	000388046900041
EID SCOPUS	84987934426
DOI	10.1016/j.msec.2016.08.072
Annotation	BaTiO3 (BTO) layers were deposited by pulsed laser deposition (PLD) on TiNb, Pt/TiNb, Si (100), andfused silica substrates using various deposition conditions. Polycrystalline BTO with sizes of crystallites in the range from 90 nm to 160 nm was obtained at elevated substrate temperatures of (600 degrees C-700 degrees C). With increasing deposition temperature above 700 degrees C the formation of unwanted rutile phase prevented the growth of perovskite ferroelectric BTO. Concurrently, with decreasing substrate temperature below 500 C, amorphous films were fornied. Post-deposition annealing of the amorphous deposits allowed obtaining perovskite BTO. Using a very thin Pt interlayer between the BTO films and TiNb substrate enabled high-temperature growth of preferentially oriented BTO. Raman spectroscopy and electrical characterization indicated polar ferroelectric behaviour of the BTO films.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2018

Number of the records: 1