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Silicon Nanophotonics. Basic Principles, Present Status, and Perspectives

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    SYSNO ASEP0471613
    Document TypeM - Monograph Chapter
    R&D Document TypeMonograph Chapter
    TitleBand structure of silicon nanocrystals
    Author(s) Kůsová, Kateřina (FZU-D) RID, ORCID
    Hapala, Prokop (FZU-D) RID, ORCID
    Jelínek, Pavel (FZU-D) RID, ORCID
    Pelant, Ivan (FZU-D) RID, ORCID, SAI
    Source TitleSilicon Nanophotonics. Basic Principles, Present Status, and Perspectives. - Singapore : Pan Stanford Publishing, 2016 / Khriachtchev L. - ISBN 978-981-4669-76-4
    Pagess. 109-144
    Number of pages36 s.
    Number of pages503
    Publication formPrint - P
    Languageeng - English
    CountrySG - Singapore
    Keywordssilicon nanocrystals ; band structure ; luminescence properties
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGBP108/12/G108 GA ČR - Czech Science Foundation (CSF)
    GPP204/12/P235 GA ČR - Czech Science Foundation (CSF)
    GA14-02079S GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    DOI10.1201/9781315364797-5
    AnnotationThis chapter puts on a rigorous basis the concept of electronic band structure in semiconductor nanocrystals. We show that, down to a certain limit, this concept has still reasonable meaning, even if the band structure becomes gradually “fuzzy” and minigaps appear within the allowed energy bands with decreasing nanocrystal size. The nanocrystals basically remember the basic features of their “parent” bulk material. In particular, we demonstrate that hydrogen-capped silicon nanocrystals, fully relaxed geometrically and electronically, retain the indirect-bandgap structure down to ≤2 nm. Moreover, we reveal, both computationally and experimentally, that mechanical (tensile) strain applied to the Si nanocrystals via proper surface capping makes these nanocrystals a direct-bandgap material, putting them on a par with standard direct-bandgap semiconductors like GaAs.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2017
Number of the records: 1  

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