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Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells
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SYSNO ASEP 0471006 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells Author(s) Stuckelberger, J. (CH)
Nogay, G. (CH)
Wyss, P. (CH)
Jeangros, Q. (CH)
Allebe, Ch. (CH)
Debrot, F. (CH)
Niquille, X. (CH)
Ledinský, Martin (FZU-D) RID, ORCID, SAI
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Despeisse, M. (CH)
Haug, F.J. (CH)
Löper, P. (CH)
Ballif, C. (CH)Number of authors 13 Source Title Solar Energy Materials and Solar Cells. - : Elsevier - ISSN 0927-0248
Roč. 158, Dec (2016), s. 2-10Number of pages 9 s. Language eng - English Country NL - Netherlands Keywords surface passivation ; passivating contact ; nanostructure ; silicon oxide ; nanocrystalline ; microcrystalline ; poly-silicon ; crystallization ; Raman ; transmission line measurement Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000386414900002 EID SCOPUS 84992166514 DOI 10.1016/j.solmat.2016.06.040 Annotation We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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