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Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

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    SYSNO ASEP0471006
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitlePassivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells
    Author(s) Stuckelberger, J. (CH)
    Nogay, G. (CH)
    Wyss, P. (CH)
    Jeangros, Q. (CH)
    Allebe, Ch. (CH)
    Debrot, F. (CH)
    Niquille, X. (CH)
    Ledinský, Martin (FZU-D) RID
    Fejfar, Antonín (FZU-D) RID, ORCID, SAI
    Despeisse, M. (CH)
    Haug, F.J. (CH)
    Löper, P. (CH)
    Ballif, C. (CH)
    Number of authors13
    Source TitleSolar Energy Materials and Solar Cells. - : Elsevier - ISSN 0927-0248
    Roč. 158, Dec (2016), s. 2-10
    Number of pages9 s.
    Languageeng - English
    CountryNL - Netherlands
    Keywordssurface passivation ; passivating contact ; nanostructure ; silicon oxide ; nanocrystalline ; microcrystalline ; poly-silicon ; crystallization ; Raman ; transmission line measurement
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsLM2015087 GA MŠk - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportFZU-D - RVO:68378271
    UT WOS000386414900002
    EID SCOPUS84992166514
    DOI10.1016/j.solmat.2016.06.040
    AnnotationWe present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer.
    WorkplaceInstitute of Physics
    ContactEva Pulcmanová, pulcman@fzu.cz, Tel.: 220 318 579
    Year of Publishing2017