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Growth and scintillation properties of 3 in. diameter Ce doped Gd.sub.3./sub.Ga.sub.3./sub.Al.sub.2./sub.O.sub.12./sub. scintillation single crystal
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SYSNO ASEP 0470883 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal Author(s) Kamada, K. (JP)
Shoji, Y. (JP)
Kochurikhin, V.V. (JP)
Okumura, S. (JP)
Yamamoto, S. (JP)
Nagura, A. (JP)
Yeom, J.Y. (KR)
Kurosawa, S. (JP)
Yokota, Y. (JP)
Ohashi, Y. (JP)
Nikl, Martin (FZU-D) RID, ORCID, SAI
Yoshikawa, A. (JP)Number of authors 12 Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 452, Oct (2016), s. 81-84Number of pages 4 s. Action American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium Event date 02.08.2015 - 07.08.2015 VEvent location Big Sky, MT Country US - United States Event type WRD Language eng - English Country NL - Netherlands Keywords single crystal growth ; oxides ; scintillator materials ; scintillators Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LH14266 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GJ15-18300Y GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 UT WOS 000386414100017 EID SCOPUS 84991711398 DOI 10.1016/j.jcrysgro.2016.04.037 Annotation The 3 in. size Ce1%:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3 mm x 3 mm x 3 mm size Ce:GAGG scintillator crystals was performed using Si-PMs. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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