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Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors

SYSNO ASEP	0470423
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors
Author(s)	Procházka, Václav (FZU-D)_ORCID Cifra, Michal (URE-Y)_{RID, ORCID, SAI} Kulha, Pavel (FZU-D) Ižák, Tibor (FZU-D)_RID Rezek, Bohuslav (FZU-D)_{RID, ORCID} Kromka, Alexander (FZU-D)_{RID, ORCID, SAI}
Source Title	Applied Surface Science. - : Elsevier - ISSN 0169-4332 Roč. 395, Feb (2017), s. 214-219
Number of pages	6 s.
Language	eng - English
Country	NL - Netherlands
Keywords	nanocrystalline diamond ; yeast cells ; field-effect transistor ; transfer characteristics pH sensitivity
Subject RIV	BO - Biophysics
OECD category	Biophysics
R&D Projects	GBP108/12/G108 GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271 ; URE-Y - RVO:67985882
UT WOS	000390428300036
EID SCOPUS	84967155237
DOI	10.1016/j.apsusc.2016.05.003
Annotation	Diamond thin films provide unique features as substrates for cell cultures and as bio-electronic sensors. Here we employ solution-gated field effect transistors (SGFET) based on nanocrystalline diamond thin films with H-terminated surface which exhibits the sub-surface p-type conductive channel. We study an influence of yeast cells (Saccharomyces cerevisiae) on electrical characteristics of the diamond SGFETs. Two different cell culture solutions (sucrose and yeast peptone dextrose–YPD) are used, with and without the cells. We have found that transfer characteristics of the SGFETs exhibit a negative shift of the gate voltage by −26 mV and −42 mV for sucrose and YPD with cells in comparison to blank solutions without the cells. This effect is attributed to a local pH change in close vicinity of the H-terminated diamond surface due to metabolic processes of the yeast cells.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2017

Number of the records: 1