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Characterization of thin MnSi and MnGe Layers Prepared by Reactive UV Pulsed Laser Deposition.
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SYSNO ASEP 0465309 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Characterization of thin MnSi and MnGe Layers Prepared by Reactive UV Pulsed Laser Deposition. Author(s) Koštejn, Martin (UCHP-M) RID, SAI, ORCID
Fajgar, Radek (UCHP-M) RID, ORCID, SAI
Dytrych, Pavel (UCHP-M) RID, ORCID, SAI
Kupčík, Jaroslav (UCHP-M) RID, ORCID, SAI
Dřínek, Vladislav (UCHP-M) RID, ORCID, SAI
Jandová, Věra (UCHP-M) RID, ORCID, SAI
Huber, Š. (CZ)
Novotný, F. (CZ)Source Title Thin Solid Films. - : Elsevier - ISSN 0040-6090
Roč. 619, NOV 30 (2016), s. 73-80Number of pages 8 s. Language eng - English Country CH - Switzerland Keywords diluted ferromagnetic semiconductor ; reactive pulsed laser deposition ; silicide Subject RIV CF - Physical ; Theoretical Chemistry R&D Projects GC15-08842J GA ČR - Czech Science Foundation (CSF) Institutional support UCHP-M - RVO:67985858 UT WOS 000389610900011 EID SCOPUS 84993326648 DOI 10.1016/j.tsf.2016.10.035 Annotation Reactive pulsed laser deposition is a technique suitable for producing homogenous thin layers of silicon or germanium with high concentration of embedded manganese atoms. Linear calibration of EDS (Energy Dispersive X-ray Spectroscopy) was utilized for an elemental analysis of thin layers. MnSi and MnGe (manganese-silicon and manganese-germanium) layers containing non-oxidized Mn were obtained for Mn molar concentration in the range from 15 to 50%. Electron diffraction showed an amorphous character of MnSi layers. MnGe layers contained two different types of nanoparticles incorporated inside an amorphous matrix. The layers were semiconducting with resistivities from 10−3 to 10−5 Ωm. Workplace Institute of Chemical Process Fundamentals Contact Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227 Year of Publishing 2017
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