Number of the records: 1  

Nanopatterning of Silicon Nitride Membranes

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    SYSNO ASEP0464387
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleNanopatterning of Silicon Nitride Membranes
    Author(s) Matějka, Milan (UPT-D) RID, ORCID, SAI
    Krátký, Stanislav (UPT-D) RID, ORCID, SAI
    Řiháček, Tomáš (UPT-D) RID, ORCID
    Kolařík, Vladimír (UPT-D) RID, ORCID, SAI
    Chlumská, Jana (UPT-D) RID, ORCID, SAI
    Urbánek, Michal (UPT-D) RID
    Number of authors6
    Source TitleNANOCON 2016. 8th International Conference on Nanomaterials - Research and Application. Conference Proceedings. - Ostrava : Tanger, 2017 - ISBN 978-80-87294-71-0
    Pagess. 709-714
    Number of pages6 s.
    Publication formPrint - P
    ActionNANOCON 2016. International Conference on Nanomaterials - Research and Application /8./
    Event date19.10.2016 - 21.10.2016
    VEvent locationBrno
    CountryCZ - Czech Republic
    Event typeWRD
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordse-beam writer ; silicon nitride membranes ; nano patterning ; anisotropic etching
    Subject RIVBH - Optics, Masers, Lasers
    OECD categoryNano-processes (applications on nano-scale)
    R&D ProjectsTE01020233 GA TA ČR - Technology Agency of the Czech Republic (TA ČR)
    LO1212 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    ED0017/01/01 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportUPT-D - RVO:68081731
    UT WOS000410656100123
    EID SCOPUS85017261626
    AnnotationMembranes are typically created by a thin silicon nitride (SIN) layer deposited on a silicon wafer. Both, top and bottom side of the wafer is covered by a thin layer of the silicon nitride. The principle of silicon nitride membranes preparation is based on the wet anisotropic etching of the bottom side of the silicon wafer with crystallographic orientation (100). While the basic procedure for the preparation of such membranes is well known, the nano patterning of thin membranes presents quite important challenges. This is partially due to the mechanical stress which is typically presented within such membranes. The resolution requirements of the membrane patterning have gradually increased. Advanced lithographic techniques and etching procedures had to be developed. This paper summarizes theoretical aspects, technological issues and achieved results. The application potential of silicon nitride membranes as a base for multifunctional micro system (MMS) is also
    discussed.
    WorkplaceInstitute of Scientific Instruments
    ContactMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Year of Publishing2018
Number of the records: 1  

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