Number of the records: 1

FeS.sub.2./sub. thin films deposition by reactive high power magnetron sputtering in Ar+H.sub.2./sub.S gas mixture

SYSNO ASEP	0464298
Document Type	A - Abstract
R&D Document Type	O - Ostatní
Title	FeS₂ thin films deposition by reactive high power magnetron sputtering in Ar+H₂S gas mixture
Author(s)	Hubička, Zdeněk (FZU-D)_{RID, ORCID, SAI} Čada, Martin (FZU-D)_{RID, ORCID, SAI} Kment, Štěpán (FZU-D)_{RID, ORCID} Olejníček, Jiří (FZU-D)_{RID, ORCID}
Source Title	International Conference on Plasma Surface Engineering. Abstracts. ( PSE 2016 ) /15./. - Braunschweig : European Joint Committee on Plasma and Ion Surface Engineering (EJC / PISE), 2016 S. 137-137
Number of pages	1 s.
Publication form	Online - E
Action	International Conference on Plasma Surface Engineering ( PSE 2016 )
Event date	12.09.2016 - 16.09.2016
VEvent location	Garmisch-Partenkirchen
Country	DE - Germany
Event type	WRD
Language	eng - English
Country	DE - Germany
Keywords	sputtering ; HIPIMS ; films ; semiconductor ; deposition
Subject RIV	BL - Plasma and Gas Discharge Physics
R&D Projects	TA03010743 GA TA ČR - Technology Agency of the Czech Republic (TA ČR)
Institutional support	FZU-D - RVO:68378271
Annotation	Polycrystalline and nanocrystalline semiconducting iron pyrite FeS2 is recently an attractive material for optoelectronic and photonic applications. Due to its relatively large optical absorption coefficient in the visible region and narrow band gap of 0.95 ev this material can be suitable for applications in photovoltaics, photodetectors and photoelectrochemistry. Semiconducting polycrystalline and nanocrystalline FeS2 thin films were deposited by high power impulse magnetron reactive sputtering system (R-HIPIMS). The magnetron system with SmCo magnets and a pure circular iron target (diameter 50 mm) was used for the impulse reactive sputtering. The gas mixture of Ar and H2S was used for the reactive sputtering process. The partial pressure of H2S in the deposition plasma reactor was changed in a wide range. The substrate was heated during the deposition by an external furnace and the deposition temperature was controlled in the range 300-600 K.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2017

Number of the records: 1