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Scanning transmission microscopy at very low energies

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    SYSNO ASEP0460206
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleScanning transmission microscopy at very low energies
    Author(s) Müllerová, Ilona (UPT-D) RID, SAI, ORCID
    Mikmeková, Eliška (UPT-D) RID
    Konvalina, Ivo (UPT-D) RID, ORCID, SAI
    Frank, Luděk (UPT-D) RID, SAI, ORCID
    Number of authors4
    Source TitleProceedings of the 15th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. - Brno : Institute of Scientific Instruments CAS, 2016 / Mika Filip - ISBN 978-80-87441-17-6
    Pagess. 40-41
    Number of pages2 s.
    Publication formPrint - P
    ActionInternational Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /15./
    Event date29.05.2016 - 03.06.2016
    VEvent locationSkalský dvůr
    CountryCZ - Czech Republic
    Event typeWRD
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordselectron microscopy ; SEM
    Subject RIVJA - Electronics ; Optoelectronics, Electrical Engineering
    R&D ProjectsTE01020118 GA TA ČR - Technology Agency of the Czech Republic (TA ČR)
    LO1212 GA MŠk - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportUPT-D - RVO:68081731
    UT WOS000391254000018
    AnnotationTo operate down to units of eV with a small primary spot size, a cathode lens with a biased specimen was introduced into the SEM. The reflected signal, accelerated secondary and backscattered electrons, is collected by detectors situated above the specimen.
    When we insert a detector below the specimen, the transmitted electron signal can also be used for imaging down to zero energy. Fig. 1 also shows an example of the simulated signal trajectories of electrons that impact on the detector of reflected electrons, based on an Yttrium Aluminium Garnet (YAG) crystal, and trajectories of electrons transmitted through the specimen and incident on a semiconductor detector based on the PIN structure.
    WorkplaceInstitute of Scientific Instruments
    ContactMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Year of Publishing2017
    Electronic address
Number of the records: 1