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DEPOSITION OF PVP-PROTECTED PLATINUM NANOPARTICLES ON SEMICONDUCTOR SUBSTRATES FOR HYDROGEN SENSING
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SYSNO ASEP 0457757 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title DEPOSITION OF PVP-PROTECTED PLATINUM NANOPARTICLES ON SEMICONDUCTOR SUBSTRATES FOR HYDROGEN SENSING Author(s) Černohorský, Ondřej (URE-Y)
Yatskiv, Roman (URE-Y) RID, ORCID
Grym, Jan (URE-Y)Source Title NANOCON 2014. 6th International conference proceedings. - Ostrava : TANGER, 2015 - ISBN 978-80-87294-53-6 Pages s. 231-234 Number of pages 4 s. Publication form Print - P Action NANOCON 2014. International Conference /6./ Event date 05.11.2014-07.11.2014 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords Graphite based Schottky junction ; PVP - protected Pt nanoparticles ; Hydrogen sensors Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering Institutional support URE-Y - RVO:67985882 UT WOS 000350636300038 Annotation High quality Schottky diode hydrogen sensors were prepared by the deposition of colloidal graphite on n-type InP substrates partly covered with PVP-protected Pt nanoparticles (NPs). A sub-monolayer of the Pt NPs was created by simple evaporation of the solvent in which Pt NPs were dispersed. The Pt NPs serve to dissociate hydrogen molecules into atomic hydrogen, which is absorbed at the metal-semiconductor interface. Hydrogen absorption leads to the formation of the dipole layer, which changes the Schottky barrier height and results in the increase of both forward and reverse current. The proposed hydrogen sensor showed high sensitivity response of similar to 10(6) to 1000 ppm H-2 in N-2 at room temperature Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2016
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