Number of the records: 1  

Characterisation of silicon carbide layers formed during BNCD deposition

  1. 1.
    SYSNO ASEP0456477
    Document TypeA - Abstract
    R&D Document TypeThe record was not marked in the RIV
    R&D Document TypeNení vybrán druh dokumentu
    TitleCharacterisation of silicon carbide layers formed during BNCD deposition
    Author(s) Taylor, Andrew (FZU-D) RID, ORCID
    Ashcheulov, Petr (FZU-D) ORCID, RID
    Čada, Martin (FZU-D) RID, ORCID, SAI
    Drahokoupil, Jan (FZU-D) RID, ORCID
    Fekete, Ladislav (FZU-D) RID, ORCID
    Klimša, Ladislav (FZU-D) ORCID
    Olejníček, Jiří (FZU-D) RID, ORCID
    Remeš, Zdeněk (FZU-D) RID, ORCID
    Čtvrtlík, R. (CZ)
    Tomáštík, J. (CZ)
    Janíček, P. (CZ)
    Mistrík, J. (CZ)
    Kopeček, Jaromír (FZU-D) RID, ORCID
    Mortet, Vincent (FZU-D) RID, ORCID
    Source TitleDiamond Conference. - Coventry : University of Warwick, 2015 / Newton M.
    P6.1-P6.3
    Number of pages3 s.
    Publication formPrint - P
    ActionDe Beers Diamond Conference 2015
    Event date06.07.2015 - 09.07.2015
    VEvent locationWarwick
    CountryGB - United Kingdom
    Event typeWRD
    Languageeng - English
    CountryGB - United Kingdom
    Keywordssilicon carbide ; nano-crystalline diamond
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA13-31783S GA ČR - Czech Science Foundation (CSF)
    LO1409 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    LM2011029 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportFZU-D - RVO:68378271
    AnnotationIn this work, we further detail properties of silicon carbide (SiC) layers [1] grown by microwave plasma enhanced chemical vapour deposition with linear antenna delivery (MW-LA-PECVD) on silicon substrates using low CO2 concentrations and compare them with nano-crystalline diamond (NCD) layers grown using similar conditions. Structural, mechanical and optical properties of these layers are compared for their potential use as transparent hard coatings for optical IR windows.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2016
Number of the records: 1  

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