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Composition tailoring in the Ce-doped multicomponent garnet epitaxial film scintillators
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SYSNO ASEP 0456457 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Composition tailoring in the Ce-doped multicomponent garnet epitaxial film scintillators Author(s) Průša, Petr (FZU-D) RID, ORCID
Kučera, M. (CZ)
Mareš, Jiří A. (FZU-D) RID, ORCID
Onderišinová, Z. (CZ)
Hanuš, M. (CZ)
Babin, Vladimir (FZU-D) RID, ORCID
Beitlerová, Alena (FZU-D) RID, ORCID
Nikl, Martin (FZU-D) RID, ORCID, SAISource Title Crystal Growth & Design. - : American Chemical Society - ISSN 1528-7483
Roč. 15, č. 8 (2015), s. 3715-3723Number of pages 9 s. Language eng - English Country US - United States Keywords scintillation ; liquid phase epitaxy ; photoelectron yield ; Ce3+ ; multicomponent garnet Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GAP204/12/0805 GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 UT WOS 000359278800022 EID SCOPUS 84938651172 DOI 10.1021/acs.cgd.5b00309 Annotation Bulk single crystals of multicomponent garnet scintillators Lu3-xGdxGayAl5-yO12:Ce exhibit much improved scintillation properties in optimized composition (x = 2-3, y = 2-3) compared to the simple Lu3Al5O12:Ce one. Namely, much higher light yield, less intense slow components and better energy resolution have been achieved. This work shows that comparable enhancement of scintillation performance can be reached in case of epitaxial garnet films of similar composition through the nature of trapping states acting in transfer stage of scintillation mechanism may be different. This is the first time, excellent scintillation properties were reproduced in epitaxial films. Lu3-xGdxGayAl5-yO12:Ce samples were grown by liquid phase epitaxy from BaO-B2O3-BaF2 flux and quantitatively compared with top performance bulk crystals as concerns light yield, energy resolution, scintillation decay and afterglow. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2016
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