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GaN:Co epitaxial layers grown by MOVPE
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SYSNO ASEP 0456264 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title GaN:Co epitaxial layers grown by MOVPE Author(s) Šimek, P. (CZ)
Sedmidubský, D. (CZ)
Klímová, K. (CZ)
Mikulics, M. (DE)
Maryško, Miroslav (FZU-D) RID
Veselý, M. (CZ)
Jurek, Karel (FZU-D) RID, ORCID, SAI
Sofer, Z. (CZ)Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 44, Mar (2015), 62-68Number of pages 7 s. Language eng - English Country NL - Netherlands Keywords doping ; metalorganic vapor phase epitaxy ; cobalt ; gallium compounds ; nitrides ; magnetic materials spintronics Subject RIV CA - Inorganic Chemistry R&D Projects GA13-20507S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 UT WOS 000349602900012 EID SCOPUS 84922496584 DOI 10.1016/j.jcrysgro.2014.10.031 Annotation We present a growth of GaN layers doped by cobalt using low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates.The in situ doping of GaN by Co was performed by the decomposition of bis(cyclopentadienyl)cobalt precursor.Three parameters,the temperature and pressure of the deposition and the Ga/Co ratio in the gas phase,influencing cobalt concentration were investigated.The obtained results were confronted with the thermodynamic predictions of Co solubility within GaN lattice and electronic structure calculations of GaN:Co.ThemagneticpropertiesofGaN:Co thin films were investigated using superconducting quantum interference device magnetometer.In addition, the layers were characterized by Raman and photoluminescence spectroscopy and atomic force microscopy. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2016
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