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Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy
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SYSNO ASEP 0450842 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy Author(s) Chobola, Z. (CZ)
Luňák, M. (CZ)
Vaněk, J. (CZ)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Kusák, I. (CZ)Source Title Journal of Electrical Engineering - ISSN 0013-578X
Roč. 66, č. 4 (2015), s. 226-230Number of pages 5 s. Language eng - English Country CZ - Czech Republic Keywords silicon solar-cells ; electrical noise ; tool Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering Institutional support FZU-D - RVO:68378271 UT WOS 000362388800006 EID SCOPUS 84940853519 DOI 10.2478/jee-2015-0036 Annotation The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2016
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