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Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

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    SYSNO ASEP0450317
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleFerromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films
    Author(s) Maryško, Miroslav (FZU-D) RID
    Hejtmánek, Jiří (FZU-D) RID, ORCID
    Laguta, Valentyn (FZU-D) RID, ORCID
    Sofer, Z. (CZ)
    Sedmidubský, D. (CZ)
    Šimek, P. (CZ)
    Veselý, M. (CZ)
    Mikulics, M. (DE)
    Buchal, C. (DE)
    Macková, Anna (UJF-V) RID, ORCID
    Malinský, Petr (UJF-V) RID, ORCID
    Wilhelm, R. A. (DE)
    Source TitleJournal of Applied Physics - ISSN 0021-8979
    Roč. 117, č. 17 (2015), "17B907-1"-"17B907-4"
    Number of pages4 s.
    Languageeng - English
    CountryUS - United States
    Keywordsmagnetic field, ; ferromagnetic and paramagnetic magnetization
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA13-20507S GA ČR - Czech Science Foundation (CSF)
    GBP108/12/G108 GA ČR - Czech Science Foundation (CSF)
    LM2011019 GA MŠk - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportFZU-D - RVO:68378271 ; UJF-V - RVO:61389005
    UT WOS000354984100230
    EID SCOPUS84926467629
    AnnotationThe SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5x5mm2 were positioned in the classical straws and within an estimated accuracy of 10-6 emu, no ferromagnetic moment was detected in the temperature region of 2–300K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T=2K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion.
    WorkplaceInstitute of Physics
    ContactKristina Potocká,, Tel.: 220 318 579
    Year of Publishing2016
Number of the records: 1