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MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
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SYSNO ASEP 0448593 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm Author(s) Zíková, Markéta (FZU-D) RID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Krčil, Pavel (FZU-D)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Komninou, Ph. (GR)
Kioseoglou, J. (GR)Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 414, Mar (2015), 167-171Number of pages 5 s. Language eng - English Country NL - Netherlands Keywords long emission wavelength ; photocurrent ; InAs quantum dots ; MOVPE ; GaAsSb layer Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA13-15286S GA ČR - Czech Science Foundation (CSF) LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000349602900030 EID SCOPUS 84922565864 DOI 10.1016/j.jcrysgro.2014.09.053 Annotation Preparation and properties of InAs/GaAs quantum dots prepared by the MOVPE covered by GaAsSb SRL with extremely long emission wavelength at 1.8 µm is presented. The prolongation of the emission wavelength was achieved by the introduction of GaAsSb SRL with Sb content of about 30% in the solid phase. The high Sb concentration in the SRL causes the preservation of QD size, it prolongs the PL wavelength. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a red shift of the PL wavelength and decrease of the PL intensity is typical. Low PL intensity may complicate light emitting applications; however, fast separation of carriers in the type II structure is an advantage for detector or solar cell application, especially with the long working wavelength. With respect to the perspective application of this structure, the photocurrent measurement was chosen as the complementary characterization method. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2016
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