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MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

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    SYSNO ASEP0448593
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleMOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
    Author(s) Zíková, Markéta (FZU-D) RID
    Hospodková, Alice (FZU-D) RID, ORCID
    Pangrác, Jiří (FZU-D) RID
    Oswald, Jiří (FZU-D) RID, ORCID
    Krčil, Pavel (FZU-D)
    Hulicius, Eduard (FZU-D) RID
    Komninou, Ph. (GR)
    Kioseoglou, J. (GR)
    Source TitleJournal of Crystal Growth. - : Elsevier - ISSN 0022-0248
    Roč. 414, Mar (2015), 167-171
    Number of pages5 s.
    Languageeng - English
    CountryNL - Netherlands
    Keywordslong emission wavelength ; photocurrent ; InAs quantum dots ; MOVPE ; GaAsSb layer
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA13-15286S GA ČR - Czech Science Foundation (CSF)
    LM2011026 GA MŠk - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportFZU-D - RVO:68378271
    UT WOS000349602900030
    EID SCOPUS84922565864
    DOI10.1016/j.jcrysgro.2014.09.053
    AnnotationPreparation and properties of InAs/GaAs quantum dots prepared by the MOVPE covered by GaAsSb SRL with extremely long emission wavelength at 1.8 µm is presented. The prolongation of the emission wavelength was achieved by the introduction of GaAsSb SRL with Sb content of about 30% in the solid phase. The high Sb concentration in the SRL causes the preservation of QD size, it prolongs the PL wavelength. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a red shift of the PL wavelength and decrease of the PL intensity is typical. Low PL intensity may complicate light emitting applications; however, fast separation of carriers in the type II structure is an advantage for detector or solar cell application, especially with the long working wavelength. With respect to the perspective application of this structure, the photocurrent measurement was chosen as the complementary characterization method.
    WorkplaceInstitute of Physics
    ContactEva Pulcmanová, pulcman@fzu.cz, Tel.: 220 318 579
    Year of Publishing2016