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Low temperature delayed recombination decay in scintillating garnets
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SYSNO ASEP 0448054 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Low temperature delayed recombination decay in scintillating garnets Author(s) Mihóková, Eva (FZU-D) RID, ORCID, SAI
Babin, Vladimir (FZU-D) RID, ORCID
Bartosiewicz, Karol (FZU-D)
Schulman, L. S. (US)
Čuba, V. (CZ)
Kučera, M. (CZ)
Nikl, Martin (FZU-D) RID, ORCID, SAISource Title Optical Materials. - : Elsevier - ISSN 0925-3467
Roč. 40, Fešb (2015), s. 127-131Number of pages 5 s. Language eng - English Country NL - Netherlands Keywords luminescence ; garnets ; scintillator ; tunneling Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA13-09876S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 UT WOS 000348891700021 EID SCOPUS 84920557257 DOI 10.1016/j.optmat.2014.12.011 Annotation We study the temperature dependence of delayed recombination decay intensity in a variety of scintillatingcrystals based on garnet hosts in a wide temperature range 8–500 K. Previous work on several scintillatingmaterials based on silicate hosts showed nonzero constant signal from very low temperatures upto about 120 K. This observation supported a previously suggested hypothesis on low temperature lossesof fast scintillation light due to quantum tunneling between the activator and nearby traps. In garnets, the subject of the present article, we observe practically constant signal in the entire monitored temperaturerange. We thus further test and confirm the quantum tunneling hypothesis in a different class ofscintillating materials. We also show that there is no thermal ionization of the activator’s excited statein all materials studied, well above room temperature. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2016
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