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Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

SYSNO ASEP	0443984
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering
Author(s)	Álvarez, M. P. (ES) del Corro, Elena (UFCH-W) Morales-García, A. (CZ) Kavan, Ladislav (UFCH-W)_{RID, ORCID} Kalbáč, Martin (UFCH-W)_{RID, ORCID} Frank, Otakar (UFCH-W)_{RID, ORCID}
Source Title	Nano Letters. - : American Chemical Society - ISSN 1530-6984 Roč. 15, č. 5 (2015), s. 3139-3146
Number of pages	8 s.
Language	eng - English
Country	US - United States
Keywords	Molybdenum disulfide ; band gap engineering ; out-of-plane compression
Subject RIV	CF - Physical ; Theoretical Chemistry
R&D Projects	GA14-15357S GA ČR - Czech Science Foundation (CSF)
	LL1301 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	UFCH-W - RVO:61388955
UT WOS	000354906000055
EID SCOPUS	84929380204
DOI	10.1021/acs.nanolett.5b00229
Annotation	Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS2. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ~0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.
Workplace	J. Heyrovsky Institute of Physical Chemistry
Contact	Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
Year of Publishing	2016

Number of the records: 1