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High-rate reactive deposition of transparent SiO.sub.2./sub. films containing low amount of Zr from molten magnetron target

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    SYSNO ASEP0437497
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleHigh-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target
    Author(s) Musil, Jindřich (FZU-D) RID, ORCID
    Satava, V. (CZ)
    Baroch, P. (CZ)
    Source TitleThin Solid Films. - : Elsevier - ISSN 0040-6090
    Roč. 519, č. 2 (2010), s. 775-777
    Number of pages3 s.
    Languageeng - English
    CountryCH - Switzerland
    Keywordssputtering ; evaporation ; reactive deposition ; target power density
    Subject RIVBM - Solid Matter Physics ; Magnetism
    CEZAV0Z10100520 - FZU-D (2005-2011)
    UT WOS000284499500039
    EID SCOPUS77958493833
    DOI10.1016/j.tsf.2010.09.009
    AnnotationThe paper reports on a reactive deposition of transparent SiO2 films with a low amount (<= 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron It is shown that the deposition rate a(D) of the transparent oxide film strongly increases at the critical target power density (W-t)(cr) when the solid target starts to melt and the magnetron operates with a molten target. In this case the evaporation of target material plays a dominant role in the reactive deposition of thin films This process is called the ionized magnetron evaporation Oxide films reactively deposited from the molten target are well transparent and highly elastic The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2015
Number of the records: 1  

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