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Direct bandgap silicon: tensile-strained silicon nanocrystals

SYSNO ASEP	0436758
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Direct bandgap silicon: tensile-strained silicon nanocrystals
Author(s)	Kůsová, Kateřina (FZU-D)_{RID, ORCID} Hapala, Prokop (FZU-D)_{RID, ORCID} Valenta, J. (CZ) Jelínek, Pavel (FZU-D)_{RID, ORCID} Cibulka, Ondřej (FZU-D)_RID Ondič, Lukáš (FZU-D)_{RID, ORCID} Pelant, Ivan (FZU-D)_{RID, ORCID, SAI}
Source Title	Advanced Materials Interfaces. - : Wiley - ISSN 2196-7350 Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9"
Number of pages	9 s.
Language	eng - English
Country	DE - Germany
Keywords	silicon nanocrystals ; badstructure ; light emission ; direct bandgap ; surface capping
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GBP108/12/G108 GA ČR - Czech Science Foundation (CSF)
	GPP204/12/P235 GA ČR - Czech Science Foundation (CSF)
	GAP204/10/0952 GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
DOI	10.1002/admi.201300042
Annotation	In this article, we show that silicon nanocrystals can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain. We document this transformation by DFT calculations mapping the E(k) band-structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000× increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole-allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and thus the presence of tensile strain, and lastly by photoluminescence studies under external hydrostatic pressure.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2015

Number of the records: 1