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Low temperature delayed recombination decay in complex oxide scintillating crystals

SYSNO ASEP	0435862
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Low temperature delayed recombination decay in complex oxide scintillating crystals
Author(s)	Mihóková, Eva (FZU-D)_{RID, ORCID, SAI} Jarý, Vítězslav (FZU-D)_{RID, ORCID} Schulman, L. S. (US) Nikl, Martin (FZU-D)_{RID, ORCID, SAI}
Source Title	IEEE Transactions on Nuclear Science. - : Institute of Electrical and Electronics Engineers - ISSN 0018-9499 Roč. 61, č. 1 (2014), 257-261
Number of pages	5 s.
Language	eng - English
Country	US - United States
Keywords	luminescence ; oxides ; scintillator ; tunneling
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	LH12150 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	LH12185 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	FZU-D - RVO:68378271
UT WOS	000334926500005
EID SCOPUS	84894476234
DOI	10.1109/TNS.2013.2273974
Annotation	We study the low temperature contribution to delayed recombination decay in several complex oxide scintillating crystals. We experimentally test the previously suggested hypothesis that the losses of fast scintillation light even at the lowest temperatures can be due to quantum effects. The results obtained for several material systems confirm that quantum tunneling between the luminescence center and a nearby defect is a good candidate for the origin of the observed phenomena.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2015

Number of the records: 1