Number of the records: 1  

Study of Nucleation and Early Growth of Diamond on GaN

  1. 1.
    SYSNO ASEP0434718
    Document TypeA - Abstract
    R&D Document TypeThe record was not marked in the RIV
    R&D Document TypeNení vybrán druh dokumentu
    TitleStudy of Nucleation and Early Growth of Diamond on GaN
    Author(s) Ižák, Tibor (FZU-D) RID
    Babchenko, Oleg (FZU-D) RID, ORCID
    Potocký, Štěpán (FZU-D) RID, ORCID
    Vanko, G. (SK)
    Vojs, Marian (FZU-D)
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Source TitleNANOCON 2014 Conference Proceedings. - Ostrava : Tanger, 2014 - ISBN 978-80-87294-55-0
    Number of pages1 s.
    ActionInternational Conference NANOCON /6./
    Event date05.11.2014-07.11.2014
    VEvent locationBrno
    CountryCZ - Czech Republic
    Event typeWRD
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordsdiamond films ; MWCVD ; GaN membranes ; c-HEMT ; heterostructures
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGP14-16549P GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    AnnotationIn this study we investigate the diamond growth on GaN substrates by microwave plasma CVD. We show that using a proper gas mixture is crucial a technological factor to keep the functionality of GaN HEMT devices. Addition of CO2 and N2 to CH4/H2 gas mixture is used to minimize damaging of GaN substrate. We also found that the gas mixture control the diamond morphology from nano- to polycrystalline character. Simultaneous study focuses on the diamond growth on GaN membranes. In this case, diamond nucleation is the most limiting technological step due to low mechanical stability of GaN membranes. We observed that standard nucleation techniques (ultrasonic seeding or bias enhanced nucleation) caused cracking of the membranes or not appropriate nucleation efficiency in the Z-depth of structures. Therefore we implemented PVA polymer consisting of diamond powder as seeding composite which resulted in a successful growth of diamond thin film.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2015
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.