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Growth rate enhancement and morphology engineering of diamond films by adding CO.sub.2./sub. or N.sub.2./sub. in hydrogen rich gas chemistry
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SYSNO ASEP 0432636 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Growth rate enhancement and morphology engineering of diamond films by adding CO2 or N2 in hydrogen rich gas chemistry Author(s) Ižák, Tibor (FZU-D) RID
Davydova, Marina (FZU-D) RID, ORCID
Varga, Marián (FZU-D) RID, ORCID
Potocký, Štěpán (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAISource Title Advanced Science, Engineering and Medicine - ISSN 2164-6627
Roč. 6, č. 7 (2014), s. 749-755Number of pages 7 s. Language eng - English Country US - United States Keywords microwave plasma CVD ; diamond growth ; nitrogen ; carbon dioxide ; growth rate ; SEM Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects FR-TI2/736 GA MPO - Ministry of Industry and Trade (MPO) GAP205/12/0908 GA ČR - Czech Science Foundation (CSF) GP14-16549P GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 DOI 10.1166/asem.2014.1571 Annotation Diamond films and structures were grown by MWCVD. We show that increasing of CH4 concentration in the gas mixture up to 8% results almost in a linear increasing of growth rate (up to 900 nm/h). Unfortunately, diamond film quality decreases due to the dominance of sp2 carbon phases, as confirmed by Raman measurements. Furthermore, increasing of CH4 concentration also enhances spontaneous nucleation. Addition of N2 and CO2 into CH4/H2 gas mixture also enhances the growth rate. Nitrogen shifts the film morphology from micro- to nanocrystalline. For enough high methane concentration (>5% CH4), increasing of nitrogen further shifts the diamond growth in formation of nanowire like structures. In opposite to the nitrogen addition, adding CO2 to the gas mixture improved the film quality. In this case, a higher methane concentration can be used to increase the growth rate while keeping good enough film quality. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2015
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