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Silicon quantum dots: surface matters

SYSNO ASEP	0430338
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Silicon quantum dots: surface matters
Author(s)	Dohnalová, K. (NL) Gregorkiewicz, T. (NL) Kůsová, Kateřina (FZU-D)_{RID, ORCID}
Source Title	Journal of Physics-Condensed Matter. - : Institute of Physics Publishing - ISSN 0953-8984 Roč. 26, č. 17 (2014), 1-28
Number of pages	28 s.
Language	eng - English
Country	GB - United Kingdom
Keywords	silicon quantum dots ; quantum dot ; surface chemistry ; quantum confinement
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GPP204/12/P235 GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
UT WOS	000334579900004
EID SCOPUS	84903363875
DOI	10.1088/0953-8984/26/17/173201
Annotation	n this review article, the latest progress in the field of silicon quantum dots is summarized, with special attention given to surface-induced effects, such as the emergence of direct bandgap transitions, and collective effects in densely packed QDs, such as space separated quantum cutting.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2015

Number of the records: 1