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Variable shape E-beam writing: proximity effect simulation and correction of binary and relief structures
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SYSNO ASEP 0429463 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Variable shape E-beam writing: proximity effect simulation and correction of binary and relief structures Author(s) Urbánek, Michal (UPT-D) RID
Matějka, Milan (UPT-D) RID, ORCID, SAI
Kolařík, Vladimír (UPT-D) RID, ORCID, SAI
Horáček, Miroslav (UPT-D) RID, ORCID, SAI
Krátký, Stanislav (UPT-D) RID, ORCID, SAI
Bok, Jan (UPT-D) RID
Chlumská, Jana (UPT-D) RID, ORCID, SAI
Mikšík, P. (CZ)
Vašina, J. (CZ)Number of authors 9 Source Title 39th International Conference on Micro and Nano Engineering MNE2013. Book of Abstracts. - Cambridge : University of Cambridge, 2013
S. 582Number of pages 1 s. Publication form Print - P Action MNE2013. International Conference on Micro and Nano Engineering /39./ Event date 16.09.2013-19.09.2013 VEvent location London Country GB - United Kingdom Event type WRD Language eng - English Country GB - United Kingdom Keywords rectangular shaped beam ; proximity effect simulation ; binary structures and relief structures Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering Institutional support UPT-D - RVO:68081731 Annotation During the e-beam writing, several effects occur, which can significantly change the desired resolution of designed patterns. The final pattern is mostly affected by two scattering effects in resist layer and substrate: forward scattering and backscattering. Due to this electron scattering effects, the exposed patterns can be significantly broader than the designed. This phenomenon, called proximity effect, causes that areas adjacent to the exposed ones receive nonzero electron dose and thus pattern can vary from the intended size. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2015
Number of the records: 1