Number of the records: 1

Electron spin resonance of paramagnetic defects and related charge carrier traps in complex oxide scintillators

SYSNO ASEP	0422109
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Electron spin resonance of paramagnetic defects and related charge carrier traps in complex oxide scintillators
Author(s)	Laguta, Valentyn (FZU-D)_{RID, ORCID} Nikl, Martin (FZU-D)_{RID, ORCID, SAI}
Source Title	Physica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972 Roč. 250, č. 2 (2013), s. 254-260
Number of pages	7 s.
Language	eng - English
Country	DE - Germany
Keywords	scintillators ; point defects ; electron spin resonance ; polarons
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	LM2011029 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GAP204/12/0805 GA ČR - Czech Science Foundation (CSF)
	IAA100100810 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
Institutional support	FZU-D - RVO:68378271
UT WOS	000314929500005
EID SCOPUS	84873518009
DOI	10.1002/pssb.201200502
Annotation	Selected results of Electron Spin Resonance study of various point defects, which participate in the processes of charge carriers transfer and capture in the family of practically important complex oxide single crystal scintillators based on tungstates, aluminum perovskites and yt-trium (lutetium) orthosilicates are presented. Particular attention is paid to the most natural defects inevitably present in oxide materials such as anion and cation va-cancies, antisite defects, self-trapped electron and hole states. Current understanding of the nature of such charge trapping states and mechanisms of their creation in the selected oxide scintillation materials is discussed as well.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2014

Number of the records: 1