GaN surface polarity determination by photoelectron diffraction

Number of the records: 1

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SYSNO ASEP	0420859
Document Type	A - Abstract
R&D Document Type	The record was not marked in the RIV
R&D Document Type	Není vybrán druh dokumentu
Title	GaN surface polarity determination by photoelectron diffraction
Author(s)	Romanyuk, Olexandr (FZU-D)_{RID, ORCID} Jiříček, Petr (FZU-D)_{RID, ORCID, SAI} Paskova, T. (US) Bartoš, Igor (FZU-D)_{RID, ORCID}
Source Title	International Vacuum Congress /19./ Abstracts. - Paris : IUVSTA, 2013 S. 68-69
Number of pages	2 s.
Action	International Vacuum Congress /19./
Event date	09.09.2013-13.09.2013
VEvent location	Paris
Country	FR - France
Event type	WRD
Language	eng - English
Country	FR - France
Keywords	GaN ; nitride ; semipolar ; photoelectron
Subject RIV	BM - Solid Matter Physics ; Magnetism
Institutional support	FZU-D - RVO:68378271
Annotation	A nondestructive approach, utilizing PED intensity, is proposed for polarity determination of the polar GaN(0001) and GaN(000-1) surfaces.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2014

Number of the records: 1