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Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV

SYSNO ASEP	0397828
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
Author(s)	Soti, G. (BE) Wauters, F. (BE) Breitenfeldt, M. (BE) Finlay, P. (BE) Kraev, I. S. (BE) Knecht, A. (BE) Porobic, T. (BE) Zákoucký, Dalibor (UJF-V)_{RID, SAI, ORCID} Severijns, N. (BE)
Number of authors	9
Source Title	Nuclear Instruments & Methods in Physics Research Section A. - : Elsevier - ISSN 0168-9002 Roč. 728, NOV (2013), s. 11-22
Number of pages	12 s.
Publication form	Online - E
Language	eng - English
Country	NL - Netherlands
Keywords	Geant4 ; PIPS detectors ; HPGe particle detectors ; electron backscattering
Subject RIV	BG - Nuclear, Atomic and Molecular Physics, Colliders
R&D Projects	LA08015 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	UJF-V - RVO:61389005
UT WOS	000324386600003
DOI	10.1016/j.nima.2013.06.047
Annotation	Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to p particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2014

Number of the records: 1