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Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers
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SYSNO ASEP 0395141 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers Author(s) Grym, Jan (URE-Y)
Yatskiv, Roman (URE-Y) RID, ORCIDNumber of authors 2 Source Title Semiconductor Science and Technology. - : Institute of Physics Publishing - ISSN 0268-1242
Roč. 28, č. 4 (2013)Number of pages 5 s. Language eng - English Country GB - United Kingdom Keywords Colloidal graphite ; Epitaxial growth ; Schottky barrier diodes Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects LD12014 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support URE-Y - RVO:67985882 UT WOS 000316345600006 DOI 10.1088/0268-1242/28/4/045006 Annotation Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2014
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