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Mn doped GaN thin films and nanoparticles

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    SYSNO ASEP0388009
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleMn doped GaN thin films and nanoparticles
    Author(s) Šofer, Z. (CZ)
    Sedmidubský, D. (CZ)
    Huber, Š. (CZ)
    Hejtmánek, Jiří (FZU-D) RID, ORCID
    Macková, Anna (UJF-V) RID, ORCID
    Fiala, R. (CZ)
    Source TitleInternational Journal of Nanotechnology - ISSN 1475-7435
    Roč. 9, 8-9 (2012), s. 809-824
    Number of pages16 s.
    Languageeng - English
    CountryGB - United Kingdom
    KeywordsGaN nanoparticles ; GaN thin films ; manganese ; transition metals ; MOVPE ; ion implantations
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA104/09/0621 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10100521 - FZU-D (2005-2011)
    AV0Z10480505 - UJF-V (2005-2011)
    UT WOS000303800500009
    DOI10.1504/IJNT.2012.046754
    AnnotationMagnetically doped GaN in the form of thin films and nanoparticles has been investigated. The Mn doped GaN layers were grown on sapphire substrates by MOVPE. The influence of deposition condition on surface morphology, magnetic and structural properties was investigated. GaN:Mn epitaxial layers exhibit magnetic moment persisting up to room temperature. The magnetically doped layers were also prepared by ion implantation of GaN layers by Mn. The influence of free carrier concentration and other parameters on magnetic properties were investigated. The pure and transition metal (Cr, Mn and Fe) doped GaN nanoparticles were synthesised by decomposition of fluoride-based complex compound in ammonia atmosphere. Mn doped nanoparticles exhibit pure paramagnetic behaviour.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2013
Number of the records: 1