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Mn doped GaN thin films and nanoparticles
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SYSNO ASEP 0388009 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Mn doped GaN thin films and nanoparticles Author(s) Šofer, Z. (CZ)
Sedmidubský, D. (CZ)
Huber, Š. (CZ)
Hejtmánek, Jiří (FZU-D) RID, ORCID
Macková, Anna (UJF-V) RID, ORCID, SAI
Fiala, R. (CZ)Source Title International Journal of Nanotechnology - ISSN 1475-7435
Roč. 9, 8-9 (2012), s. 809-824Number of pages 16 s. Language eng - English Country GB - United Kingdom Keywords GaN nanoparticles ; GaN thin films ; manganese ; transition metals ; MOVPE ; ion implantations Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA104/09/0621 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) AV0Z10480505 - UJF-V (2005-2011) UT WOS 000303800500009 DOI 10.1504/IJNT.2012.046754 Annotation Magnetically doped GaN in the form of thin films and nanoparticles has been investigated. The Mn doped GaN layers were grown on sapphire substrates by MOVPE. The influence of deposition condition on surface morphology, magnetic and structural properties was investigated. GaN:Mn epitaxial layers exhibit magnetic moment persisting up to room temperature. The magnetically doped layers were also prepared by ion implantation of GaN layers by Mn. The influence of free carrier concentration and other parameters on magnetic properties were investigated. The pure and transition metal (Cr, Mn and Fe) doped GaN nanoparticles were synthesised by decomposition of fluoride-based complex compound in ammonia atmosphere. Mn doped nanoparticles exhibit pure paramagnetic behaviour. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2013
Number of the records: 1