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Particle detectors based on InP Schottky diodes
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SYSNO ASEP 0387285 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Particle detectors based on InP Schottky diodes Author(s) Yatskiv, Roman (URE-Y) RID, ORCID
Grym, Jan (URE-Y)Number of authors 2 Source Title Journal of Instrumentation. - : Institute of Physics Publishing - ISSN 1748-0221
Roč. 10, č. 7 (2012), C100051-C100055Number of pages 6 s. Language eng - English Country GB - United Kingdom Keywords Particle detector ; High purity InP layer ; Schottky diode Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects OC10021 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LD12014 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support URE-Y - RVO:67985882 UT WOS 000310834800005 DOI 10.1088/1748-0221/7/10/C10005 Annotation A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241Am source at room temperature. The influence of the quality of p-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2013
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