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Mn doping of GaN layers grown by MOVPE

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    SYSNO ASEP0385913
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleMn doping of GaN layers grown by MOVPE
    Author(s) Šimek, P. (CZ)
    Šofer, Z. (CZ)
    Sedmidubský, D. (CZ)
    Jankovský, O. (CZ)
    Hejtmánek, Jiří (FZU-D) RID, ORCID
    Maryško, Miroslav (FZU-D) RID
    Václavů, M. (CZ)
    Mikulics, M. (DE)
    Source TitleCeramics - Silikáty. - : VŠCHT Praha. - : Ústav struktury a mechaniky hornin AV ČR, v. v. i. - ISSN 0862-5468
    Roč. 56, č. 2 (2012), s. 122-126
    Number of pages5 s.
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordsmetalorganic vapor phase epitaxy ; nitrides ; magnetic materials ; semiconducting III-V materials
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA104/09/0621 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10100521 - FZU-D (2005-2011)
    UT WOS000307678000006
    EID SCOPUS84864464968
    AnnotationIn this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)(2)Mn was used as a Mn-precursor The flow of the Mn precursor was 0.2-3.2 mu mol.min(-1). The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar the temperature 1050 degrees C and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer's properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films.
    WorkplaceInstitute of Physics
    ContactKristina Potocká,, Tel.: 220 318 579
    Year of Publishing2013
Number of the records: 1