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Structural and optical properties study of GaN implanted by various rare earth ions
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SYSNO ASEP 0382664 Document Type C - Proceedings Paper (int. conf.) R&D Document Type The record was not marked in the RIV Title Structural and optical properties study of GaN implanted by various rare earth ions Author(s) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Sofer, Z. (CZ)
Sedmidubský, D. (CZ)
Kormunda, M. (CZ)Number of authors 5 Source Title Program and Abstract Book. -, 2012 Number of pages 1 s. Action The 18th International Conference on Ion Beam Modifications of Materials Event date 02.09.2012-07.09.2012 VEvent location Qingdao Country CN - China Language eng - English Country CN - China Keywords implantation ; RBS channelling Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders Subject RIV - cooperation Electronics ; Optoelectronics, Electrical Engineering R&D Projects 106/09/0125 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Institutional support UJF-V - RVO:61389005 Annotation We present a structural study of rare earth elements implanted GaN layers grown by low pressure metal organic vapour phase epitaxy on c-plane sapphire substrates. Sm, Tm, Eu, Tb and Ho ions were implanted with energies of 200 and 400 keV and fluences ranging from 1×1015 to 1×1016 cm−2 into GaN with (0001) crystallographic orientation. The chemical composition and concentration profiles of ion-implanted layers were studied by Rutherford Back-Scattering spectrometry (RBS) and compared to SRIM 2008 simulations. With the increasing fluence and lower ion energy used at implantation we observed disagreement of experimental and predicted depth profiles of implanted ions, which is connected with the structural changes of the surface. The structural properties of the layers were characterized by RBS channelling, Raman spectroscopy and X-ray diffraction. AFM was used to determine the surface morphology changes after implantation. Structural analysis shows the amount of disordered atoms in the surface layer and in the depth of projected range of implanted ions. The comparable density of disordered atoms exhibit samples implanted by Tb, Sm and Eu, 400 keV implanted at fluence at 5x1015 cm-2 in depth appropriate to the projected range Rp and Ga enrichment is observed in the surface layer. The lowest level of modification of the surface layer in the Rp depth exhibit GaN implanted by Tb and Eu, 400 keV using fluence 1x1015 cm-2. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2013
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