Number of the records: 1  

Very low energy scanning electron microscopy in nanotechnology

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    SYSNO ASEP0375383
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleVery low energy scanning electron microscopy in nanotechnology
    Author(s) Müllerová, Ilona (UPT-D) RID, SAI, ORCID
    Hovorka, Miloš (UPT-D)
    Mika, Filip (UPT-D) RID, SAI, ORCID
    Mikmeková, Eliška (UPT-D) RID
    Mikmeková, Šárka (UPT-D) RID, SAI, ORCID
    Pokorná, Zuzana (UPT-D) RID, ORCID, SAI
    Frank, Luděk (UPT-D) RID, SAI, ORCID
    Number of authors7
    Source TitleInternational Journal of Nanotechnology - ISSN 1475-7435
    Roč. 9, 8/9 (2012), s. 695-716
    Number of pages22 s.
    Languageeng - English
    CountryGB - United Kingdom
    Keywordsscanning electron microscopy ; very low energy electrons ; cathode lens ; grain contrast ; strain contrast ; imaging of participates ; dopant contrast ; very low energy STEM ; graphene
    Subject RIVJA - Electronics ; Optoelectronics, Electrical Engineering
    R&D ProjectsOE08012 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    ED0017/01/01 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    IAA100650902 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z20650511 - UPT-D (2005-2011)
    UT WOS000303800500004
    EID SCOPUS84860764190
    DOI10.1504/IJNT.2012.046749
    AnnotationThe group of low energy electron microscopy at ISI AS CR in Brno has developed a methodology for very low energy scanning electron microscopy at high image resolution by means of an immersion electrostatic lens (the cathode lens) inserted between the illumination column of a conventional scanning electron microscope and the sample. In this way the microscope resolution can be preserved down to a landing energy of the electrons one or even fractions of an electronvolt. In the range of less than several tens of electronvolts the image signal generation processes include contrast mechanisms not met at higher energies, which respond to important features of the 3D inner potential of the target and visualise its local crystallinity as well as the electronic structure. The elecfron wavelength comparable with interatomic distances allows observation of various wave-optical phenomena in imaging.
    WorkplaceInstitute of Scientific Instruments
    ContactMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Year of Publishing2012
Number of the records: 1  

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