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Mn-doped ZnO thin films deposited by spray MOVPE
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SYSNO ASEP 0373971 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Mn-doped ZnO thin films deposited by spray MOVPE Author(s) Sofer, Z. (CZ)
Sedmidubský, D. (CZ)
Huber, S. (CZ)
Šaněk, F. (CZ)
Nádherný, L. (CZ)
Maryško, Miroslav (FZU-D) RID
Hejtmánek, Jiří (FZU-D) RID, ORCID
Jurek, Karel (FZU-D) RID, ORCID, SAI
Mikulics, M. (DE)Source Title EWMOVPE XIV. - Wroclaw : Printing house of Wroclaw University of Technology, 2011 / Prazmowska J. - ISBN 978-83-7493-599-9 Pages s. 83-86 Number of pages 4 s. Action European Workshop on Metalorganic Vapor Phase Epitaxy /14./ Event date 05.06.2011-08.06.2011 VEvent location Wrocław Country PL - Poland Event type EUR Language eng - English Country PL - Poland Keywords ZnO ; Mn doping ; spintronics ; spray MOVPE ; magnetism Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA104/09/0621 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation Zinc oxide belongs to wide bandgap semiconductors.When doped by magn. impurities it may become a promising candidate for spintronic applications.The magn. behavior has been reported for layers doped with manganese,iron and other transition metals.However,the thin films growth of high quality layers is difficult due to the violent reaction of oxygen and zinc precursors.The high cost of substrates for homoepitaxial growth represents another problem.In our contribution we present the growth of ZnO and Mn doped ZnO layers by spray pyrolysis MOVPE.Zinc and manganese acetylacetonates and tetramethylheptadionates dissolved in methanol were used as precursors for layer deposition.The precursors were dosed in the reactor by liquid flow controlled and injected to the preheated reactor inlet by ultrasonic nebulizer.The horizontal quartz reactor is equipped with a Hastelloy susceptor and an induction heating system.The influence of deposition condition on the layer properties was investigated. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
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