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Particle detectors based on semiconducting InP epitaxial layers
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SYSNO ASEP 0368041 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Particle detectors based on semiconducting InP epitaxial layers Author(s) Yatskiv, Roman (URE-Y) RID, ORCID
Grym, Jan (URE-Y)
Žďánský, Karel (URE-Y)Number of authors 3 Source Title Journal of Instrumentation. - : Institute of Physics Publishing - ISSN 1748-0221
Roč. 6, C01072 (2011), C010721-C010725Number of pages 5 s. Language eng - English Country GB - United Kingdom Keywords Solid state detectors ; Gamma detectors ; Radiation-hard detectors Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects KJB200670901 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) OC10021 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GP102/08/P617 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z20670512 - URE-Y (2005-2011) UT WOS 000291345600077 DOI 10.1088/1748-0221/6/01/C01072 Annotation In this work, we present study of electrical properties and detection performance of two types of InP detector structures: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 1014 cm-3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2012
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